Carrier dynamics of Mn-induced states in GaN thin films

Dynamics of Anomalous Temperature-Induced Emission Shift in MOCVD-grown (Al, In)GaN Thin Films

We present a comprehensive study of the optical characteristics of (Al, In)GaN epilayers measured by photoluminescence (PL), integrated PL intensity, and timeresolved PL spectroscopy. For not only InGaN, but also AlGaN epilayers with large Al content, we observed an anomalous PL temperature dependence: (i) an “S-shaped” PL peak energy shift (decrease-increase-decrease) and (ii) an “inverted S-s...

Magnetic and Optical Properties of Mn-doped Gan Thin Films and P-i-n Devices

In this paper, we report on the growth and characterization of single crystal GaMnN thin films and p-i-n junction devices grown by metal-organic chemical vapor deposition (MOCVD). Single crystal GaMnN films were achieved by optimizing the growth temperature, growth rate and the Mn:Ga gas phase ratio. A growth window for obtaining single crystal Ga1-xMnxN with 0.006≤x≤0.023 was found within a te...

Carrier-mediated ferromagnetism in N codoped (Zn,Mn)O (101Â ̄0) thin films

Carrier-mediated ferromagnetism in N codoped (Zn,Mn)O (1010) thin films

Dynamics and formation of localized states in flowing thin films: Bound states of solitary waves